August 12th, 2024

Racetrack Memory May Arrive in 5-7 Years (2010)

Scientists in Switzerland are developing racetrack memory, which could be 100,000 times faster than hard disks, reduce energy consumption, and be market-ready in 5-7 years for various devices.

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Racetrack Memory May Arrive in 5-7 Years (2010)

Scientists in Switzerland are developing a new type of computer memory known as racetrack memory, which could be 100,000 times faster than current hard disks and consume significantly less power. This innovative memory utilizes nickel-iron nanowires, allowing data to be transferred without mechanical movement, resulting in rapid access speeds. Professor Mathias Kläui from EPFL highlights that this technology could lead to computers that boot up instantly and operate with much lower energy consumption, potentially reducing idle power usage from 300 mW to just a few mW. The anticipated market-ready devices could emerge within 5-7 years, with applications in both mobile devices and larger systems. Kläui suggests that racetrack memory could initially target the Flash market, eventually replacing traditional memory architectures. This advancement is particularly relevant as global electricity consumption from computing is projected to rise from 6% to 15% by 2025, making energy efficiency a critical consideration.

- Racetrack memory could be 100,000 times faster than current hard disks.

- The technology may lead to instant boot-up times and significantly reduced energy consumption.

- Market-ready devices are expected to be available in 5-7 years.

- Initial applications may focus on mobile devices before expanding to larger systems.

- The development addresses increasing global electricity consumption from computing.

Link Icon 4 comments
By @boesboes - 8 months
This will be great with my memristor based computer!
By @tasty_freeze - 8 months
At least bubble memory was an actual product for a time, though it was competitive only in a few niche use cases. Racetrack memory sounds like it was never more than an idea.
By @raziel2701 - 8 months
A blast from the past! I was in grad school in 2014 when I learned about racetrack memory applications using magnetic skyrmions, they were pretty hot because they were considered topologically-protected spin textures and around that time the Nobel prize was/would be awarded to topological phase transitions and topological phases of matter, so the grant money was flowing, and this guy Matthias Klaui from the article was a bit of hot shit in this niche field I was in.

I remember at the time magnetic skyrmions could only materialize at low temperatures in materials like FeGe that had to be grown in a specific crystalline phase, B20 if memory serves. Fast forward to today and people can nucleate skyrmions at room-temperature using multilayers of more conventional materials, so at least that was some progress.

What never materialized was a disruptive technology, or even a technology. This racetrack memory thing was affected by the most common of magnetic domain wall defects: pinning. The so-called 'topological protection' promise never came true, skyrmions get pinned by defects just like regular domain walls and so then.... poof! I was fortunate to have found failure early on my skyrmion research and moved elsewhere, but at the time, boy was there froth everywhere about the revolution that's coming!

10-15 years later and this thing is still relegated to the lab. And truth be told, I still think this whole magnetic skyrmion thing is the same thing as magnetic bubble domains, it's just that we could study things in greater detail today and learned that these bubbles have chirality, but it always felt like this was more of a re-discovery or further refinement of something already known, rather than this new, hot, revolutionary thing it was hyped to be, but hey, maybe that's how you get money no?

I just find it fascinating how wrong the predictions were, how little of the promise/potential was actually realized, and what a waste of energy to be stressing about these things! Man, grad school was this weird reality-distortion field.

By @aidenn0 - 8 months
Yet another technology that NAND beat out. See also STT-MRAM, PRAM, and RRAM.