Scientists discover way to 'grow' sub-nanometer sized transistors

Scientists at the Institute for Basic Science have developed a groundbreaking method to "grow" sub-nanometer sized transistors. Led by Director Jo Moon-Ho, the research team achieved epitaxial growth of 1D metallic materials less than 1 nm wide, using them as gate electrodes for ultra-miniaturized 2D semiconductor transistors. This innovation overcomes traditional lithography limitations, enabling control of electron movement within a few nanometers. By leveraging mirror twin boundaries (MTB) of molybdenum disulfide, the team transformed 2D semiconductors into 1D metals, allowing for the construction of large-area, highly integrated electronic circuits. This breakthrough not only impacts semiconductor technology but also advances basic materials science by demonstrating the synthesis of new material phases through precise crystal structure control. The research team's work holds promise for developing low-power, high-performance electronic devices in the future, surpassing current semiconductor technology predictions. The study was published in Nature Nanotechnology, showcasing the potential for significant advancements in the field.