X-Ray Upgrade Can See Transistors in 3D

An upgraded X-ray imaging technique developed by a team at the Paul Scherrer Institute, in collaboration with the University of Southern California and ETH Zürich, can produce high-resolution 3D images of semiconductor chips, revealing their internal structures without destruction. This method, known as burst ptychography, achieves a resolution of 4 nanometers, significantly improving upon the previous 19-nanometer resolution of the earlier ptychographic X-ray laminography (PyXL). The technique utilizes high-energy X-rays from a synchrotron, allowing for comprehensive imaging of a chip's wiring and transistor features by illuminating the sample from various angles and reconstructing the image through advanced algorithms.

This non-destructive approach is particularly beneficial for quality control in semiconductor manufacturing, as it enables engineers to identify defects and assess the accuracy of chip designs without the need for slicing the chips. The imaging can penetrate up to 5 micrometers deep, providing a more detailed view than traditional methods like transmission electron microscopy (TEM), which only offers a depth of 10 to 30 nanometers. The technique has been successfully applied to image an AMD Ryzen 5 processor, revealing intricate details of its FinFET transistors and interconnects. As transistors become increasingly complex and 3D in design, this imaging advancement is crucial for improving semiconductor manufacturing processes and ensuring the quality of modern chips.