X-Rays Image Transistors in 3D

An upgraded X-ray imaging technique developed by a team at the Paul Scherrer Institute, in collaboration with the University of Southern California and ETH Zürich, can produce high-resolution 3D images of semiconductor chips, revealing their internal structures without destruction. This method, known as burst ptychography, achieves a resolution of 4 nanometers, significantly improving upon the previous 19-nanometer resolution of its predecessor, ptychographic X-ray laminography (PyXL). The technique utilizes high-energy X-rays from a synchrotron to penetrate the entire chip, allowing for detailed imaging of wiring paths and transistor features. This advancement addresses the limitations of traditional imaging methods, which often require destructive slicing of chips and are time-consuming. The new approach enables engineers to quickly identify and analyze defects in chip designs, enhancing the quality control process in semiconductor manufacturing. The imaging technique has been successfully applied to an AMD Ryzen 5 processor, providing insights into the precision of metal placements and the overall quality of the chip's engineering. As transistors become increasingly complex and 3D in structure, this method is poised to play a crucial role in advancing semiconductor technology, allowing for better validation of designs against actual manufacturing outcomes. The researchers believe that further improvements could lead to resolutions as fine as 1 nanometer, which would be invaluable for the future of chip design and production.