August 6th, 2024

X-Rays Image Transistors in 3D

An upgraded X-ray imaging technique, burst ptychography, achieves 4-nanometer resolution for non-destructive 3D imaging of semiconductor chips, improving defect identification and supporting the complexity of modern chip designs.

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X-Rays Image Transistors in 3D

An upgraded X-ray imaging technique has been developed that allows for high-resolution, 3D imaging of semiconductor chips, revealing intricate details of their designs and flaws without causing damage. This method, known as burst ptychography, achieves a resolution of 4 nanometers, significantly improving upon the previous 19-nanometer resolution of its predecessor, ptychographic X-ray laminography (PyXL). The technique utilizes high-energy X-rays from a synchrotron to penetrate the entire chip, enabling engineers to visualize the arrangement of transistors and interconnects in three dimensions. This advancement is crucial as modern chips become increasingly complex, with features that are no longer planar. The ability to inspect chips non-destructively allows for faster identification of manufacturing defects and better alignment between design and actual production. The researchers, including those from the Paul Scherrer Institute and the University of Southern California, believe that further improvements could lead to resolutions as fine as 1 nanometer. This technique is expected to enhance the efficiency of semiconductor manufacturing processes, which are vital for the ongoing miniaturization and performance enhancement of electronic devices.

- A new X-ray imaging technique provides 3D views of semiconductor chips at 4-nanometer resolution.

- The method allows for non-destructive inspection of chips, revealing designs and flaws.

- Burst ptychography improves upon previous imaging techniques, facilitating faster defect identification.

- The advancement is critical as semiconductor features become more complex and 3D in nature.

- Researchers aim to further enhance the resolution, potentially reaching 1 nanometer in the future.

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